Technology: | Si | |
Mounting Style: | Through Hole | |
Package / Case: | TO-220-3 | |
Number of Channels: | 1 Channel | |
Transistor Polarity: | N-Channel | |
Vds - Drain-Source Breakdown Voltage: | 60 V | |
Id - Continuous Drain Current: | 50 A | |
Rds On - Drain-Source Resistance: | 22 mOhms | |
Vgs - Gate-Source Voltage: | 25 V | |
Maximum Operating Temperature: | + 175 C | |
Packaging: | Bulk | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Fall Time: | 65 ns | |
Forward Transconductance - Min: | 22 S | |
Height: | 9.4 mm | |
Length: | 10.1 mm | |
Minimum Operating Temperature: | - 55 C | |
Pd - Power Dissipation: | 120 W | |
Rise Time: | 105 ns | |
Transistor Type: | 1 N-Channel | |
Type: | MOSFET | |
Typical Turn-Off Delay Time: | 60 ns | |
Typical Turn-On Delay Time: | 15 ns | |
Width: | 4.7 mm | |
Part # Aliases: | FQP50N06_NL | |
Unit Weight: | 0.063493 oz |