Technology: | Si | |
Mounting Style: | Through Hole | |
Package / Case: | TO-220-3 | |
Number of Channels: | 1 Channel | |
Transistor Polarity: | P-Channel | |
Vds - Drain-Source Breakdown Voltage: | - 200 V | |
Id - Continuous Drain Current: | 6.5 A | |
Rds On - Drain-Source Resistance: | 800 mOhms | |
Vgs - Gate-Source Voltage: | 20 V | |
Maximum Operating Temperature: | + 150 C | |
Packaging: | Tube | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Fall Time: | 24 ns | |
Height: | 9.01 mm | |
Length: | 10.41 mm | |
Minimum Operating Temperature: | - 55 C | |
Pd - Power Dissipation: | 74 W | |
Rise Time: | 27 ns | |
Transistor Type: | 1 P-Channel | |
Typical Turn-Off Delay Time: | 28 ns | |
Typical Turn-On Delay Time: | 12 ns | |
Width: | 4.7 mm | |
Unit Weight: | 0.211644 oz |