Product Category: | MOSFET | |
Technology: | Si | |
Package / Case: | TO-247-3 | |
Number of Channels: | 1 Channel | |
Transistor Polarity: | N-Channel | |
Vds - Drain-Source Breakdown Voltage: | 500 V | |
Id - Continuous Drain Current: | 20 A | |
Rds On - Drain-Source Resistance: | 270 mOhms | |
Vgs - Gate-Source Voltage: | +/- 20 V | |
Maximum Operating Temperature: | + 150 C | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Fall Time: | 65 ns | |
Height: | 20.82 mm | |
Length: | 15.87 mm | |
Minimum Operating Temperature: | - 55 C | |
Pd - Power Dissipation: | 250000 mW | |
Rise Time: | 81 ns | |
Transistor Type: | 1 N-Channel | |
Typical Turn-Off Delay Time: | 85 ns | |
Typical Turn-On Delay Time: | 23 ns | |
Width: | 4.82 mm | |
Unit Weight: | 1.340411 oz |