Transistor Polarity: | P-Channel | |
Vds - Drain-Source Breakdown Voltage: | - 100 V | |
Id - Continuous Drain Current: | 5.2 A | |
Rds On - Drain-Source Resistance: | 600 mOhms | |
Vgs - Gate-Source Voltage: | 20 V | |
Maximum Operating Temperature: | + 175 C | |
Packaging: | Tube | |
Channel Mode: | Enhancement | |
Brand: | Vishay Semiconductors | |
Configuration: | Single | |
Fall Time: | 25 ns | |
Height: | 9.8 mm | |
Length: | 10.63 mm | |
Minimum Operating Temperature: | - 55 C | |
Pd - Power Dissipation: | 37 W | |
Rise Time: | 29 ns |