Product Category: | MOSFET | |
Technology: | Si | |
Mounting Style: | Through Hole | |
Package / Case: | TO-220-3 | |
Number of Channels: | 1 Channel | |
Transistor Polarity: | N-Channel | |
Vds - Drain-Source Breakdown Voltage: | 60 V | |
Id - Continuous Drain Current: | 84 A | |
Rds On - Drain-Source Resistance: | 12 mOhms | |
Vgs - Gate-Source Voltage: | 20 V | |
Maximum Operating Temperature: | + 175 C | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Fall Time: | 53 ns | |
Height: | 8.77 mm | |
Length: | 10.54 mm | |
Minimum Operating Temperature: | - 55 C | |
Pd - Power Dissipation: | 200 W | |
Rise Time: | 78 ns | |
Transistor Type: | 1 N-Channel | |
Typical Turn-Off Delay Time: | 48 ns | |
Typical Turn-On Delay Time: | 12 ns | |
Width: | 4.69 mm | |
Unit Weight: | 0.211644 oz |