Technology: | Si | |
Mounting Style: | Through Hole | |
Package / Case: | TO-220-3 | |
Number of Channels: | 1 Channel | |
Transistor Polarity: | N-Channel | |
Vds - Drain-Source Breakdown Voltage: | 75 V | |
Id - Continuous Drain Current: | 140 A | |
Rds On - Drain-Source Resistance: | 7 mOhms | |
Vgs - Gate-Source Voltage: | 20 V | |
Qg - Gate Charge: | 150 nC | |
Packaging: | Tube | |
Pd - Power Dissipation: | 330 W | |
Transistor Type: | 1 N-Channel | |
Unit Weight: | 0.211644 oz |