Technology: | Si | |
Mounting Style: | SMD/SMT | |
Package / Case: | TDSON-8 | |
Number of Channels: | 1 Channel | |
Transistor Polarity: | N-Channel | |
Vds - Drain-Source Breakdown Voltage: | 80 V | |
Id - Continuous Drain Current: | 55 A | |
Rds On - Drain-Source Resistance: | 12.3 mOhms | |
Vgs - Gate-Source Voltage: | +/- 20 V | |
Vgs th - Gate-Source Threshold Voltage: | 2.8 V | |
Qg - Gate Charge: | 19 nC | |
Maximum Operating Temperature: | + 150 C | |
Packaging: | Reel | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Fall Time: | 4 ns | |
Forward Transconductance - Min: | 44 S | |
Height: | 1.1 mm | |
Length: | 6.35 mm | |
Minimum Operating Temperature: | - 55 C | |
Pd - Power Dissipation: | 66 W | |
Rise Time: | 18 ns | |
Series: | BSC123N08 | |
Tradename: | OptiMOS | |
Transistor Type: | 1 N-Channel | |
Typical Turn-Off Delay Time: | 19 ns | |
Typical Turn-On Delay Time: | 12 ns | |
Width: | 6.35 mm | |
Part # Aliases: | BSC123N08NS3 BSC123N08NS3GXT G SP000443916 |