Technology: | Si | |
Mounting Style: | Through Hole | |
Package / Case: | TO-247-3 | |
Number of Channels: | 1 Channel | |
Transistor Polarity: | N-Channel | |
Vds - Drain-Source Breakdown Voltage: | 900 V | |
Id - Continuous Drain Current: | 9.2 A | |
Rds On - Drain-Source Resistance: | 980 mOhms | |
Vgs - Gate-Source Voltage: | 30 V | |
Qg - Gate Charge: | 95 nC | |
Maximum Operating Temperature: | + 150 C | |
Packaging: | Tube | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Fall Time: | 50 ns | |
Height: | 20.15 mm | |
Length: | 15.75 mm | |
Minimum Operating Temperature: | - 55 C | |
Pd - Power Dissipation: | 200 W | |
Rise Time: | 19 ns | |
Transistor Type: | 1 N-Channel | |
Typical Turn-Off Delay Time: | 76 ns | |
Typical Turn-On Delay Time: | 30 ns | |
Width: | 5.15 mm | |
Unit Weight: | 1.340411 oz |